SEOUL, South Korea / RankWire.AI / – Samsung Electronics has unveiled innovative memory and storage solutions aimed at enhancing artificial intelligence infrastructure. The company shared its plans at the 2026 OCP Global Summit in San Jose, California, held from October 12 to 15. Its roadmap emphasizes high-performance memory, expanding memory via Compute Express Link, and developing next-generation solid-state drives. Additionally, Samsung will collaborate with AMD on a joint CXL demonstration. These initiatives are designed to address current AI server capacity limitations.
Samsung articulated its strategic approach through three core objectives: increased speed, scalable memory, and persistent data storage. To boost speed, the company showcased customized high-bandwidth memory alongside the eighth-generation HBM5. For scalability, it emphasized CXL as a key method to extend memory capacity beyond what is installed within individual servers. Regarding data persistence, Samsung introduced advanced SSD-based storage and management technologies. The company also displayed storage software designed to optimize data processing efficiency in AI systems.
Samsung pointed out that the rising deployment of AI agents increases the demand for more memory during inference processes. Larger models generate more data as they respond, and this data must remain accessible to processors. Traditional systems often restrict the amount of memory available per processor. To overcome this barrier, Samsung presented CXL technology as a practical solution. It also highlighted key-value cache optimization, enabling AI models to reuse previously processed data instead of repeating the same computations.
Partnership with AMD enhances CXL memory expansion efforts
Samsung and AMD will jointly demonstrate a CXL-based solution designed to increase memory capacity in AI systems. This technology allows processors to share memory resources rather than relying solely on local server memory. Samsung reports that engineers have validated this solution within real system environments. The demonstration builds upon a memorandum of understanding signed in March 2026 between the two companies for next-generation AI memory and computing. AMD CEO Lisa Su visited Korea on October 7 and met with Jeon Young-hyun, Vice Chairman of Samsung’s Device Solutions division.
Memory pooling also featured prominently in Samsung’s presentation. The company showcased CMM-D, a CXL-based DRAM module that links multiple memory units into one shared pool, from which systems can draw capacity as needed. It also displayed processing-in-memory technology, which performs certain calculations within memory chips to reduce data movement and energy consumption. Exhibits included 2-nanometer gate-all-around wafers, Groq LPU wafers, and Nvidia’s Groq 3 LPX system.
Early co-design efforts influence Samsung’s AI memory development plan
Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, outlined the company’s plans during an executive session. He emphasized that larger AI models and increasing inference workloads make higher memory capacity and bandwidth critical for optimal system performance. Shim also noted that Samsung is expanding co-design and technical validation efforts with global partners from the earliest stages of development. The goal is to align memory and storage products more precisely with customer system designs.
Samsung MAX Lab offers customers a dedicated space to evaluate memory and storage solutions under real-world AI workloads. The lab provides co-design services tailored to specific system configurations, allowing clients to test pre-commercial technologies such as PIM and next-generation SSDs before their market debut. Samsung participated in the summit as a Diamond Sponsor. This event follows its appearances in 2026 at Nvidia GTC, COMPUTEX, and the Future of Memory and Storage conference, reflecting the company’s expanding focus on AI memory innovation.